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| MA4BN1840-1 Monolithic HMICTM Integrated Bias Network Features Broad Bandwidth Specified 18 to 40GHz Usable 10GHz to 50 GHz Extremely Low Insertion Loss High RF-DC Isolation Rugged, Fully Monolithic Glass Encapsulation RoHS Compliant Rev. V3 Description The MA4BN1840-1 is a fully monolithic broadband bias network utilizing M/A-COM's HMIC (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the formation of silicon vias by imbedding them in low loss, low dispersion glass along with high Q spiral inductors and MIM capacitors. The close proximity between elements and the combination of silicon and glass gives this HMIC device low loss and high performance with exceptional repeatability through millimeter frequencies. TM Large bond pads facilitate the use of low inductance ribbon bonds, while the gold backside metallization provides the RF and DC ground. This allows for manual or automatic die attach via electrically conductive silver epoxy or RoHS compliant solders. . Yellow areas denote bond pads Applications The MA4BN1840-1 bias network is suitable for the D.C. biasing of PIN diode control circuits. It functions as an RF-DC de-coupling network as well as the D.C. return. The device can also be used as a bi-directional re-active coupler for Schottky detector circuits. D.C. currents up to 150 mA and D.C. voltages up to 50 V may be used. Schematic J1 (IN) J2 (OUT) Maximum Operating Conditions at +25C (Unless otherwise noted) Parameter Operating Temperature Storage Temperature Die Attach Temperature RF C.W. Incident Power D.C. Bias Current D.C. Bias Voltage Value -65C to +125C -65C to +150C 320C for 20 sec 10 Watts +/- 150 mA +/- 50 V RF & D.C. Ground D.C. Bias 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4BN1840-1 Monolithic HMICTM Integrated Bias Network RoHS Compliant Rev. V3 Electrical Specifications @ TAMB = +25oC on Wafer Measurements Parameter Frequency Minimum Value Average Value Maximum Value Units Insertion Loss RF - DC Isolation Input Return Loss Output Return Loss 18-40 GHz 18-40 GHz 18-40 GHz 18-40 GHz 30 15 15 0.15 35 17 17 0.2 - dB dB dB dB Typical RF Performance at TA = +25C 0.0 -0.1 -0.2 -0.3 -0.4 Loss ( dB ) -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 10 J1-J2 INSERTION LOSS 15 20 25 30 35 40 45 50 Freq. GHz 0 -5 -10 -15 -20 J1-J2 INPUT RETURN LOSS Loss ( dB ) -25 -30 -35 -40 -45 -50 10 15 20 25 30 35 40 45 50 Freq. GHz 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4BN1840-1 Monolithic HMICTM Integrated Bias Network RoHS Compliant Typical RF Performance at TA = +25C Rev. V3 0 -5 -10 -15 -20 Loss (dB) -25 -30 -35 -40 -45 -50 10 15 20 25 30 Freq. GHz 35 40 45 50 J2-J1 OUTPUT RETURN LOSS 0 -5 -10 -15 -20 -25 -30 Loss (dB) -35 -40 -45 -50 -55 -60 -65 -70 10 15 RF-DC ISOLATION 20 25 30 35 40 45 50 Freq. GHz 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4BN1840-1 Monolithic HMICTM Integrated Bias Network RoHS Compliant Rev. V3 MILLIMETERS DIM MIN A B C D E F 1.475 1.075 0.800 0.400 0.810 0.520 MAX 1.575 1.175 0.820 0.420 0.830 0.550 MIN 58 43 31.5 15.7 31.9 20.5 MILS MAX 62 46 32.3 16.5 32.7 21.7 RF Bond Pads 0.150 X 0.125 REF. DC Bond Pad 0.150 X 0.125 REF. Thickness 0.005 REF. 5.90 X 4.92 5.90 X 4.92 0.125 REF. Assembly Considerations Cleanliness These chips should be handled in a clean environment. Electro-Static Sensitivity The MA4BN1840-1 bias network is ESD, Class 1B sensitive. The proper ESD handling procedures should be used. Wire Bonding Thermosonic wedge wire bonding using 0.003" x 0.00025" ribbon or ball bonding with 0.001" diameter gold wire is recommended. A stage temperature of 150C and a force of 18 to 22 grams should be used. Ultrasonic energy should be adjusted to the minimum required. RF bonds should be as short as possible for best performance. Mounting These chips have Ti-Pt-Au topside and backside metal. They can be die mounted with either a gold-tin eutectic solder preform , RoHS compliant solders or electrically conductive silver epoxy. Mounting surface must be clean of organic contaminants and flat for best adhesion results. Eutectic Die Attachment An 80/20 gold-tin eutectic solder preform is recommended with a work surface temperature of 255C and a tool tip temperature of 265C. When hot gas is applied, the tool tip temperature should be 290C. The chip should not be exposed to temperatures greater than 320C for more than 20 seconds. No more than three seconds should be required for attachment. Electrically Conductive Epoxy Die Attachment Assembly should be preheated to 125-150C. A minimum amount of epoxy should be used, approximately 1 to 2 mils thickness for best electrical and thermal conductivity. A thin epoxy fillet should be visible around the perimeter of the chip after placement. Cure epoxy per manufacturer's time-temperature schedule. Typically 150C for 1 hour. RoHS Soldering See application note M538 page 7 on the M/A-COM website for the recommended heating profile. 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4BN1840-1 Monolithic HMICTM Integrated Bias Network RoHS Compliant Rev. V3 Operation of the MA4BN1840-1 Broadband operation of the MA4BN1840-1 bias network is accomplished by applying D.C. bias to the DC port on the die. The outputs, J1 and/or J2 provide the D.C. bias to the corresponding, connected, microwave device. An external blocking capacitor is required if the current is to be directed to only one RF output port such as in a bias T configuration. This device can also be used as a ground return when the DC Bias Port is attached to the RF and D.C. ground. The small D.C. resistance ( < 1 ) of the D.C. Bias Port allows up to +/- 150 mA @ +/- 50 V to be delivered while still maintaining > 35 dB RF to D.C. isolation. MA4BN1840-1 Schematic J1 (IN) J2 (OUT) D.C. Ground D.C. Bias 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4BN1840-1 Monolithic HMICTM Integrated Bias Network RoHS Compliant Rev. V3 Biasing Applications using the MA4BN1840-1 Bias Circuit for Shunt Diode Switch D.C. Bias J1 line < 5 IN External D.C Block J2 ( OPEN ) OUT External D.C Block PIN Diodes 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4BN1840-1 Monolithic HMICTM Integrated Bias Network RoHS Compliant Rev. V3 Bias Circuit for Series Switch D.C. Bias J J2 (OPEN) IN line < 5 OUT External D.C Block PIN Diodes External D.C Block J1 (GND) J2 (GND) D.C. Return 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MA4BN1840-1 Monolithic HMICTM Integrated Bias Network RoHS Compliant Rev. V3 Bias Circuit for Series - Shunt Diode Switch D.C. Bias J1 J2 (OPEN) line < 5 IN External D.C Block External D.C Block OUT PIN Diodes J1 (GND) J2 (GND ) D.C. Return 8 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. |
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